CVD
; borondoped diamond(BDD)film;electrochemical
; cyclic voltammetry通过MPCVD法在高掺杂硅衬底上生长掺硼金刚石膜(BDD),
并用四探针,扫描电镜,激光拉曼,电化学工作站对其进行了检测,发
现所制备的掺硼金刚石膜电导率达10-2Ω·cm,同时发现金刚石膜
质量因硼原子的掺入而有所下降,采用循环伏安法研究其电化学性
质,结果表明,与Pt电极相比(1.8V和-1×10-3~3×10-4A),BDD具
有很宽的电化学窗口(~3.2 V),较低的背景电流(-3×10-6~2×10
-6A),在铁氰化钾电解液中,表面所进行的电化学反应具有较好的准
可逆性,在对有机物苯酚的催化氧化检测中发现:与Pt电极相
比,BDD电极氧化能力强,且氧化产物简单、彻底,因此可以作为一种
理想的电极材料.
Borondoped diamond(BDD)film on the heavily
doped silicon substrate was prepared by the microwave
plasma chemical vapor deposition. The electrochemical
properties of BDD were characterized by resistivity
measurement by 4point probe method ,SEM,Raman
spectroscopy and electrochemistry working station. The
resistivity of diamond films is 10-2 Ω·cm,
Meanwhile,the quality of the diamond films was
deteriorated with the increasing of boron doped. The
electrochemical properties of the electrode were
investigated using cyclic voltammetry. The results
showed that BDD electrode had a very wide potential
window(~3.2 V)and very low background current (-3×10-
6~2×10-6 A),comparing with Pt electrode(1.8 V and -1×
10-3~3×10-4 A). In electrolyte including
Ferri/Ferrocyanide, the electrochemical reaction was
carried out on the surface with good quasi
reversibility. Studies of the oxidation of organic
compounds showed that,compared with Pt electrode, the
diamond electrode could oxidate phenol ,and the process
of oxidation was very simple and complete.
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收稿日期:20100726基金项目:湖北省自然科学
基金(2008CDB255);湖北省教育厅Q20081505项目的支持作者简
介:陈朋(1985),男,山西长治人,硕士.研究方向:微波等离子体
制备掺硼金刚石膜及其应用.通讯作者:满卫东,男,博士,副教授.
研究方向:微波等离子体制备金刚石膜及其应用.