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[1]湛玉龙,付秋明,马志斌*.MPCVD法AlN基体上金刚石薄膜的制备[J].武汉工程大学学报,2011,(01):54-57,61.[doi:10.3969/j.issn.16742869.2011.01.014]
 ZHAN Yu long,FU Qiu ming,MA Zhi bin.Preparation of diamond film on AlN substrate by MPCVD[J].Journal of Wuhan Institute of Technology,2011,(01):54-57,61.[doi:10.3969/j.issn.16742869.2011.01.014]
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MPCVD法AlN基体上金刚石薄膜的制备(/HTML)
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2011年01期
页码:
54-57,61
栏目:
材料科学与工程
出版日期:
2011-01-30

文章信息/Info

Title:
Preparation of diamond film on AlN substrate by MPCVD
文章编号:
16742869(2011)01005404
作者:
湛玉龙付秋明马志斌*
武汉工程大学材料科学与工程学院,武汉工程大学湖北省
等离子体化学与新材料重点实验室,湖北 武汉 430074
Author(s):
ZHAN Yulong FU Qiuming MA Zhibin
School of Material Science and Engineering, Key Laboratory of Plasma Chemical and
Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430074, China
关键词:
AlN金刚石薄膜丙酮MPCVD
Keywords:
AlN diamond film acetone MPCVD
分类号:
O484.1
DOI:
10.3969/j.issn.16742869.2011.01.014
文献标志码:
A
摘要:
以丙酮和氢气作气源,采用微波等离子体化学气相沉积法(MPCVD)在AlN表面制备金刚石薄膜,并通过拉曼光谱(Raman),扫描电子显微镜(SEM)对沉积得到的金刚石薄膜进行表征.研究表明:直接在AlN表面沉积因金刚石的形核密度很低而很难得到连续的金刚石薄膜.利用金刚石微粉研磨AlN表面有利于金刚石形核密度的提高,Raman分析和电镜观察发现:所得的金刚石薄膜存在杂质和缺陷,没有明显的刻面特征,而且是由粒径较大的球状颗粒堆积而成.
Abstract:
Diamond film was grown on AlN surface using acetone and hydrogen mixture in microwave plasma chemical vapor deposition (MPCVD). The diamond film samples were investigated by Raman spectroscopy analysis (Raman) and Scanning electron microscopy (SEM). The results showed that the continuous diamond film was very difficult to be directly deposited on AlN surface due to low diamond nucleation density. After the diamond nucleation density was improved by using diamond fine powder to grind the AlN surface, the getting diamond film contained nondiamond phase and defects, had no clearly facet features, and was stacked by big size balllike particles from Raman analysis and SEM observation.

参考文献/References:

[1]王丽军,段新超,张雷,等.金刚石薄膜的发展、制备及应用[J].材料导报网刊,2008,3(3):37.
[2]陈小虎,王珉.金刚石的性能与应用[J].机械科学与技术,1997,26(6):13.
[3]Nakamura S, Pearton S, Fasol G.The blue laser diode: the complete story[M].New York:Springer,2000.
[4]Mmunoz E, Monroy J, Pau F L, et al.Gibart. III nitrides and UV detection[J].J Phys:Condens Matter,2001,13:7115.
[5]Ambacher O. Growth and applications of Group IIInitrides[J].J Phys D:Appl Phys,1998,31:26532710.
[6]Christoph E Nebel, Claudio R Miskys, Jose A Garrido,et al. AlN/Diamond npjunctions[J].Diamond & Related Materials,2003,12:18731876.
[7]Miskys C R,Garrido J A,Nebel C E,et al. AlN/diamond heterojunction diodes[J].Appl Phys Lett,2003,82(2):290292.
[8]Miskys C R,Garrido J A,Hermann M,et al.Structural and interface properties of an AlN diamond ultraviolet light emitting diode[J].Appl Phys Lett,2004,85(17):36993701.
[9]Masataka Imura, Kiyomi Nakajima, Meiyong Liao,et al. Growth mechanism of caxisoriented AlN on (001) diamond substrates by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,2010,312:368372.
[10]Masataka Imura, Kiyomi Nakajima, Meiyong Liao, et al. Growth mechanism of caxisoriented AlN on (111) diamond substrates by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,2010,312:13251328.
[11]Wang W L,Liao K J,Zhang R Q. Plasma associated diamond nucleation on AlN in hotfilament chemical vapor deposition[J].Materials Letters,2000,44:336340.
[12]满卫东,汪建华,王传新,等.微波CVD法低温制备纳米金刚石薄膜[J].武汉化工学院学报,2006,28(4):5761.
[13]熊礼威,汪建华,满卫东.MPECVD法在抛光石英玻璃上沉积金刚石薄膜[J].辽宁石油化工大学学报,2006,26(4):4750.
[14]王琳,王永明,刘桂珍,等.微波等离子CVD低温沉积金刚石膜及其表征[J].武汉理工大学学报,2007,29(4):4952.
[15]杨仕娥,李会军,边超,等.CVD金刚石膜生长过程的Raman分析[J].真空与低温,2002,8(2):9092.
[16]谭平恒,李峰,成会明.碳材料的拉曼光谱——从纳米管到金刚石[M].北京:化学工业出版社,2007.
[17]叶永权,匡同春,雷淑梅,等.金刚石(膜)的拉曼光谱表征技术进展[J].金刚石与磨料磨具工程,2007(5):1721.
[18]阎研,张树霖,郝少康,等.CVD金刚石膜中1 145 cm-1拉曼峰的研究[J].光散射学报,2004,16(2):131135.
[19]T LópezRíos, E Sandré, S Leclercq, et al. Polyacetylene in diamond films evidenced by surface enhanced Raman scattering[J].Physical Review Letters,1996,76(26):49354938.
[20]马志斌,张文文.金刚石薄膜的低温沉积[J].武汉化工学院学报,2003,25(4):4042.
[21]Ferrari A C,Robertson J.Origin of the 1 150 cm-1 Raman mode in nanocrystalline diamond[J].Phys Rev B,2001,63(12):1405.

相似文献/References:

[1]谢鹏,汪建华*,王传新,等.热丝CVD法制备金刚石管[J].武汉工程大学学报,2008,(01):73.
 XIE Peng,WANG Jian hua,WANG Chuan xin,et al.The synthesis of diamond tubes by HFCVD[J].Journal of Wuhan Institute of Technology,2008,(01):73.

备注/Memo

备注/Memo:
收稿日期:20100921作者简介:湛玉龙(1988),男,湖北潜江人,硕士研究生.研究方向:等离子体技术与薄膜材料.指导老师:马志斌,男,博士,教授.研究方向:低温等离子体技术及其应用.
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