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[1]钟志有,汪浩,张腾,等.生长温度对掺钛氧化锌薄膜光学性质的影响[J].武汉工程大学学报,2012,(9):34-38.[doi:103969/jissn16742869201209009]
　ZHONG Zhi you,WANG Hao,ZHANG Teng,et al.Effect of growth temperature on optical properties of Tidoped zinc oxide thin films[J].Journal of Wuhan Institute of Technology,2012,(9):34-38.[doi:103969/jissn16742869201209009]
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生长温度对掺钛氧化锌薄膜光学性质的影响
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2012年9期
页码:
34-38
栏目:
机电与信息工程
出版日期:
2012-10-10

文章信息/Info

Title:
Effect of growth temperature on optical properties of
Tidoped zinc oxide thin films
文章编号:
16742869(2012)09003405
作者:
钟志有1; 2; 汪浩1; 2; 张腾1; 2; 周金1
1. 中南民族大学电子信息工程学院，湖北 武汉 430074；
2. 中南民族大学等离子体研究所，湖北 武汉 430074
Author(s):
ZHONG Zhiyou1; 2;  WANG Hao1; 2;  ZHANG Teng1; 2;  ZHOU Jin1
1. College of Electronic Information Engineering, SouthCentral University for Nationalities, Wuhan 430074, China;
2. Plasma Research Institute, SouthCentral University for Nationalities, Wuhan 430074, China
关键词:
掺钛氧化锌薄膜; 磁控溅射; 微观结构; 光学常数
Keywords:
Tidoped zinc oxide thin films;  magnetron sputtering;  microstructure;  optical constrants
分类号:
TM914
DOI:
103969/jissn16742869201209009
文献标志码:
A
摘要:
以氧化锌钛陶瓷靶作为溅射源，采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌（TZO）透明导电薄膜，通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析，研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明：所有TZO样品均为六角纤锌矿结构，并具有（002）择优取向，生长温度对薄膜晶粒尺寸和光学透射率的影响较明显，而对折射率、消光系数和光学能隙的影响较小.当生长温度为200 ℃时，TZO薄膜的晶粒尺寸最大，可见光范围平均透射率（含衬底）为76.1%，对应的直接光学能隙为3.45 eV.
Abstract:
Tidoped zinc oxide (TZO) thin films were deposited by radiofrequency magnetron sputtering method using a sintered ceramic target. The effect of growth temperature on structure and optical properties of TZO thin films was investigated by Xray diffraction, UVvisible spectrophotometer and whole optical spectrum fitting. The results show that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction. The growth temperature significantly affects the grain size and optical transmittance of the TZO thin films, but slightly influences the refractive index, extinction coefficient and optical bandgap of the deposited films. The TZO thin film prepared at growth temperature of 200 ℃ possesses the maximum grain size, an average transmittance of 76.1 % in the visible light range, and an optical bandgap of 3.45 eV.

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备注/Memo

备注/Memo:
收稿日期：20120728基金项目：湖北省自然科学基金资助项目（2011CDB418）；中南民族大学研究生创新基金（chxxyz120023）作者简介：钟志有（1965），男，湖南岳阳人，博士，教授，硕士研究生导师.研究方向：光电子材料与器件.
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