[1] WANG Y M, CHEN Y, ZHAO W Q, et al. A self-powered fast-response ultraviolet detector of p-n homojunction assembled from two ZnO-based nanowires [J]. Nano-Micro Letters,2017,9:11:1-7. [2] PAN X Y,ZHANG J Q,ZHOU H,et al. Single?layer ZnO hollow hemispheres enable high-performance self-powered perovskite photodetector for optical communication [J]. Nano-Micro Letters,2021,13:70:1-12. [3] WEI C T, XU J P, SHI S B, et al. The improved photoresponse properties of self-powered NiO/ZnO heterojunction arrays UV photodetectors with designed tunable Fermi level of ZnO [J]. Journal of Colloid and Interface Science,2020,577:279-289. [4] OHTA H, HIRANO M, NAKAHARA K, et al. Fabrication and photoresponse of a p-n heterojunction diode composed of transparent oxide semiconductors,p-NiO and n-ZnO [J]. Applied Physics Letters,2003,83(5):1029-1031. [5] HUANG H H,FANG G J,MO X M,et al. Zero-biased near-ultraviolet and visible photodetector based on ZnO nanorods/n-Si heterojunction [J]. Applied Physics Letters,2009,94(6):063512:1-3. [6] CHEN C H, CHANG S J,CHANG S P,et al. Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction [J]. Chemical Physics Letters,2009,476(1/2/3):69-72. [7] HATCH S M,BRISCOE J,DUNN S. A self-powered ZnO-nanorod/CuSCN UV photodetector exhibiting rapid response [J]. Advanced Materials,2013,25(6):867-871. [8] HOU Z D,LING C C,XUE X,et al. Surface lattice reconstruction enhanced the photoresponse performance of a self-powered ZnO nanorod arrays/Si heterojunction photodetector [J]. Journal of Materials Chemistry C,2020,8(48):17440-17449. [9] CHATZIGIANNAKIS G, JAROS A, LETURCQ R,et al. Laser-microstructured ZnO/p-Si photodetector with enhanced and broadband responsivity across the ultraviolet-visible-near-infrared range [J]. ACS Applied Electronic Materials,2020,2(9):2819-2828. [10] PAUPORTé T,LINCOT D. Heteroepitaxial electrode-position of zinc oxide films on gallium nitride [J]. Applied Physics Letters,1999,75(24):3817-3819. [11] LUPAN O,PAUPORTE T,VIANA B. Low-voltage UV-electroluminescence from ZnO-nanowire array/p-GaN light-emitting diodes [J]. Advanced Materials,2010,22(30):3298-3302. [12] XU S,XU C,LIU Y,et al. Ordered nanowire array blue/near-UV light emitting diodes [J]. Advanced Materials,2010,22(42):4749-4753. [13] LIU W,XIU F X,SUN K,et al. Na-doped p-type ZnO microwires [J]. Journal of the American Chemical Society,2010,132(8):2498-2499. [14] REN X L,ZHANG X H,LIU N S,et al. White light-emitting diode from Sb-doped p-ZnO nanowire arrays/n-GaN film [J]. Advanced Functional Materials,2015,25(14):2182-2188. [15] FANG F,ZHAO D X,FANG X,et al. Optical and electrical properties of individual p-type ZnO microbelts with Ag dopant [J]. Journal of Materials Chemistry,2011,21(38):14979-14983. [16] ZHAO W Q, XIONG X, HAN Y B, et al. Fe-doped p-ZnO nanostructures/n-GaN heterojunction for “blue-free” orange light-emitting diodes [J]. Advance Optical Materials,2017,5(17):1700146:1-8. [17] LING B, ZHAO J L, SUN X W, et al. Electro-luminescence from ferromagnetic Fe-doped ZnO nanorod arrays on p-Si [J]. IEEE Transactions on Electron Devices,2010,57(8):1948-1952. [18] LI H X,ZHAO W Q,LIU Y,et al. High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes [J]. Materials Letters,2019,239:45-47. [19] CHEN T X,CAO L,ZHANG W H,et al. Correlation between electronic structure and magnetic properties of Fe-doped ZnO films [J]. Journal of Applied Physics,2012,111(12):123715:1-8. [20] KNUT R,LAGERQVIST U,PALMGREN P,et al. Photoinduced reduction of surface states in Fe:ZnO [J]. The Journal of Chemical Physics,2015,142(20):204703. [21] QU J,GE Y R,ZU B Y,et al. Transition-metal-doped p-type ZnO nanoparticle-based sensory array for instant discrimination of explosive vapors [J]. Small,2016,12(10):1369-1377.