[1]李振军,徐洮,李红轩,等. 类金刚石薄膜的摩擦学特性及磨损机制研究进展[J]. 材料科学与工程学报,2004,22(5):774-777.
[2]Erdemir A. Genesis of superlow friction and wear in diamondlike carbon films[J]. Tribology International,2004,37: 1005-1012.
[3]Adhikari S,Omer A M,Adhikary S,et al. Diamondlike carbon thin films grown by largearea surfacewave mode microwave plasma CVD: Effects of stage distance to microwave window [J]. Diamond and Related Materials,2006,15: 913-916.
[4]Dearnaley G,James H. Biomedical applications of diamondlike carbon (DLC) coatings: A review [J]. Surface and Coating Technology,2005,200: 2518-2524.
[5]张敏,程发良,姚海军. 类金刚石膜的性质和制备及应用[J]. 表面技术,2006,35(2):4-6.
[6]黄丽娜,江河清,张治军,等. 乙腈中电化学法制备类金刚石薄膜[J]. 化学研究,2004,15(3):9-11.
[7]杜景永,张贵锋,李国卿,等. 不锈钢上液相电沉积类金刚石薄膜[J]. 电化学,2007,13(1):58-61.
[8]代明江,林松盛,侯惠军,等. 用离子源技术制备类金刚石膜研究[J]. 中国表面工程,2005,18(5):16-19.
[9]白秀琴,李建. 碳离子束注入辅助蒸发低温沉积DLC薄膜研究[J]. 润滑与密封,2007,32(6):6-8.
[10]Wu J B,Chang J,Li M Y,et al. Characterization of diamondlike carbon coatings prepared by pulsed bias cathodic vacuum arc deposition [J]. Thin Solid Films,2007,516(24): 243-247.
[11]楚信谱,苟伟,李国卿,等. 射频辉光放电自偏压对类金刚石碳膜结构和性能的影响[J]. 真空科学与技术学报,2006,26:143-145.
[12]Sakamoto Y,Takaya M. Growth of carbon nitride using microwave plasma CVD [J]. Thin Solid Films,2005,475: 198-201.
[13]Ma G J,Zhang H F,Wu H C,et al. Preparation of diamondlike carbon by PBIIenhanced microwave ECR chemical vapor deposition [J]. Surface and Coatings Technology,2007,201:6623-6626.
[14]周顺,严一心. 脉冲真空电弧离子镀在不锈钢上沉积类金刚石薄膜的研究[J]. 真空,2005,42(4):15-18.
[15]黄卫东,詹如娟. 表面波等离子体沉积类金刚石膜结构的Raman光谱和XPS分析[J]. 光谱学与光谱分析,2003,23(3):512-514.
[16]Shroder R E,Nemanich R J,Matsuki M,et al. Raman scattering from sp2 carbon clusters [J]. Physical Review B,1992,46(11): 7169-7174.
[17]赵之明,李合琴,顾金宝,等. 射频磁控溅射制备类金刚石薄膜的特性[J]. 真空与低温,2006,12(4):215-218.
[1]熊礼威,崔晓慧,汪建华,等.星形微波等离子体化学气相沉积装置上类金刚石薄膜的制备[J].武汉工程大学学报,2013,(11):53.[doi:103969/jissn16742869201311012]
XIONG Li\|wei,CUI Xiao\|hui,WANG Jian\|hua,et al.Diamond\|like carbon films deposited on star\|shape microwave plasma enhanced chemical vapor deposition equipment[J].Journal of Wuhan Institute of Technology,2013,(03):53.[doi:103969/jissn16742869201311012]